EECS 320. Introduction to Semiconductor Devices
Prerequisite: EECS 215 and PHYSICS 240 or 260. I, II (4 credits)
Introduction to semiconductors in terms of atomic bonding and electron energy bands. Equilibrium statistics of electrons and holes. Carrier dynamics; continuity, drift, and diffusion currents; generation and recombination processes, including important optical processes. Introduction to: PN junctions, metal-semiconductor junctions, light detectors and emitters; bipolar junction transistors, junction and MOSFETs.

EECS 429. Semiconductor Optoelectronic Devices
Prerequisite: EECS 320 or graduate standing. II (4 credits)
Materials for optoelectronics, optical processes in semiconductors, absorption and radiation, transition rates and carrier lifetime. Principles of LEDs, lasers, photodetectors, modulators and solar cells. Optoelectronic integrated circuits. Designs, demonstrations and projects related to optoelectronic device phenomena.

EECS 529. Semiconductor Lasers and LEDs
Prerequisite: EECS 429. I (3 credits)
Optical processes in semiconductors, spontaneous emission, absorption gain, stimulated emission. Principles of light-emitting diodes, including transient effects, spectral and spatial radiation fields. Principles of semiconducting lasers; gain-current relationships, radiation fields, optical confinement and transient effects.