Selected Recent Publications
- “Catalyst-free InGaN/GaN Nanowire Light Emitting Diodes Grown on (001) Silicon by Molecular Beam Epitaxy”, W. Guo, M. Zhang, A. Banerjee and P. Bhattacharya, NanoLetters, 10, 3355-3359, 2010.
- “Tunnel Injection In0.25Ga0.75N/GaN Quantum Dot Light Emitting Diodes”, P. Bhattacharya, M. Zhang and J. Hinckley, Applied Physics Letters, 97, 251107, 2010.
- “Monolithic Single GaN Nanowire Laser with Photonic Crystal Microcavity on Silicon”, J. Heo, W. Guo, and P. Bhattacharya, Applied Physics Letters, 98, 021110, 2011.
- “Auger Recombination in III-Nitride Nanowires and its Effect on Nanowire LED Characteristics”, W. Guo, M. Zhang, P. Bhattacharya and J.S. Heo, NanoLetters, 11, 1434, 2011.
- “InGaN/GaN Disk-in-Nanowire White Light Emitting Diodes on (001) Silicon”, W. Guo, A. Banerjee, and P. Bhattacharya, and B.S. Ooi, Applied Physics Letters, 98, 193102, 2011.
- “Room Temperature Ultralow Threshold GaN Nanowire Polariton Laser”, A. Das, J. Heo, M. Janowski, W. Guo, L. Zhang, H. Deng, and P. Bhattacharya, Physical Review Letters, 107, 066405, 2011.
- “Effect of Magnetic Field on Polariton Emission Characteristics of a Quantum Well Microcavity Diode,” P. Bhattacharya, A. Das, S. Bhowmick, M. Jankowski and C-S. Lee, Applied Physics Letters, 100, 171106, 2012.
- “Threshold Characteristics of Quantum Dot Rolled-Up Microtube Lasers”, S. Bhowmick, J. Heo and P. Bhattacharya, IEEE Journal of Quantum Electronics, 48, 927, 2012.
- “Room Temperature Single GaN Nanowire Spin Valves with FeCo/MgO Tunnel Contacts”, H. Kum, J. Heo, S. Jahangir, A. Banerjee, W. Guo, and P. Bhattacharya, Applied Physics Letters, 100, 182407, 2012
- “Integration of 1.3µm Quantum Dot Lasers with Si3N4 Waveguides for Single Mode Optical Interconnects,” C-S. Lee, T. Frost, W. Guo and P. Bhattacharya, IEEE Journal of Quantum Electronics, 48, 1346, 2012.
- “Polariton Bose-Einstein Condensate at Room Temperature in a Al(Ga)N Nanowire-Dielectric Microcavity with a Spatial Potential Trap,” A. Das, P. Bhattacharya, J. Heo, A Banerjee, and W. Guo, Proceedings of the National Academy of Sciences, 110, 2735, 2013.
- “Electrically Driven Polarized Single Photon Emission for InGaN Quantum Dot in a Single GaN Nanowire,” S. Deshpande, J. Heo, A. Das, and P. Bhattacharya, Nature Communications, 9 April, 2013. DOI: 10.1038/ncomms 2691.
- “Solid State Electrically Injected Exciton-Polariton Laser”, P. Bhattacharya, B. Xiao, A. Das, S. Bhowmick, and J. Heo, Physical Review Letters, 110, 206403, 2013.
- “Room Temperature Polariton Lasing from GaN Nanowire Array Clad by Dielectric Microcavity,” J. Heo, S. Jahangir, B. Xiao and P. Bhattacharya, NanoLetters, May, 2013, DOI: 10.1021/nj400060j.
- “Chirped InAs/InP Quantum Dash Laser with Enchanced Broad Spectrum of Stimulated Emission”, M.Z.M. Khan, T.K. Ng, C-S. Lee, P. Bhattacharya, and B.S. Ooi, Applied Physics Letters, 102, 091102.
- “InGaN/GaN Quantum Dot Red (λ=630 nm) Laser”, T. Frost, A. Banerjee, K. Sun, and P. Bhattacharya, IEEE Journal of Quantum Electronics, submitted for publication.