Selected Recent Publications

  1. “Catalyst-free InGaN/GaN Nanowire Light Emitting Diodes Grown on (001) Silicon by Molecular Beam Epitaxy”, W. Guo, M. Zhang, A. Banerjee and P. Bhattacharya, NanoLetters, 10, 3355-3359, 2010.
  1. “Tunnel Injection In0.25Ga0.75N/GaN Quantum Dot Light Emitting Diodes”, P. Bhattacharya, M. Zhang and J. Hinckley, Applied Physics Letters, 97, 251107, 2010.
  1. “Monolithic Single GaN Nanowire Laser with Photonic Crystal Microcavity on Silicon”, J. Heo, W. Guo, and P. Bhattacharya, Applied Physics Letters, 98, 021110, 2011.
  1. “Auger Recombination in III-Nitride Nanowires and its Effect on Nanowire LED Characteristics”, W. Guo, M. Zhang, P. Bhattacharya and J.S. Heo, NanoLetters, 11, 1434, 2011.
  1. “InGaN/GaN Disk-in-Nanowire White Light Emitting Diodes on (001) Silicon”, W. Guo, A. Banerjee, and P. Bhattacharya, and B.S. Ooi, Applied Physics Letters, 98, 193102, 2011.
  1. “Room Temperature Ultralow Threshold GaN Nanowire Polariton Laser”, A. Das, J. Heo, M. Janowski, W. Guo, L. Zhang, H. Deng, and P. Bhattacharya, Physical Review Letters, 107, 066405, 2011.
  1. “Effect of Magnetic Field on Polariton Emission Characteristics of a Quantum Well Microcavity Diode,” P. Bhattacharya, A. Das, S. Bhowmick, M. Jankowski and C-S. Lee, Applied Physics Letters, 100, 171106, 2012.
  1. “Threshold Characteristics of Quantum Dot Rolled-Up Microtube Lasers”, S. Bhowmick, J. Heo and P. Bhattacharya, IEEE Journal of Quantum Electronics, 48, 927, 2012.
  1. “Room Temperature Single GaN Nanowire Spin Valves with FeCo/MgO Tunnel Contacts”, H. Kum, J. Heo, S. Jahangir, A. Banerjee, W. Guo, and P. Bhattacharya, Applied Physics Letters, 100, 182407, 2012
  1. “Integration of 1.3µm Quantum Dot Lasers with Si3N4 Waveguides for Single Mode Optical Interconnects,” C-S. Lee, T. Frost, W. Guo and P. Bhattacharya, IEEE Journal of Quantum Electronics, 48, 1346, 2012.
  1. “Polariton Bose-Einstein Condensate at Room Temperature in a Al(Ga)N Nanowire-Dielectric Microcavity with a Spatial Potential Trap,” A. Das, P. Bhattacharya, J. Heo, A Banerjee, and W. Guo, Proceedings of the National Academy of Sciences, 110, 2735, 2013.
  1. “Electrically Driven Polarized Single Photon Emission for InGaN Quantum Dot in a Single GaN Nanowire,” S. Deshpande, J. Heo, A. Das, and P. Bhattacharya, Nature Communications, 9 April, 2013. DOI: 10.1038/ncomms 2691.
  1. “Solid State Electrically Injected Exciton-Polariton Laser”, P. Bhattacharya, B. Xiao, A. Das, S. Bhowmick, and J. Heo, Physical Review Letters, 110, 206403, 2013.
  1. “Room Temperature Polariton Lasing from GaN Nanowire Array Clad by Dielectric Microcavity,” J. Heo, S. Jahangir, B. Xiao and P. Bhattacharya, NanoLetters, May, 2013, DOI: 10.1021/nj400060j.
  1. “Chirped InAs/InP Quantum Dash Laser with Enchanced Broad Spectrum of Stimulated Emission”, M.Z.M. Khan, T.K. Ng, C-S. Lee, P. Bhattacharya, and B.S. Ooi, Applied Physics Letters, 102, 091102.
  1. “InGaN/GaN Quantum Dot Red (λ=630 nm) Laser”, T. Frost, A. Banerjee, K. Sun, and P. Bhattacharya, IEEE Journal of Quantum Electronics, submitted for publication.